Read e-book online Advanced Power MOSFET Concepts PDF

By B. Jayant Baliga

ISBN-10: 1441959165

ISBN-13: 9781441959164

"Advanced energy MOSFET techniques" presents an in-depth remedy of the physics of operation of complicated energy MOSFETs. Analytical types for explaining the operation of all of the complicated energy MOSFETs are built and defined. the result of numerical simulations are supplied to provide extra perception into the machine physics and validate the analytical types. the result of two-dimensional simulations also are given, with a view to corroborate the analytical versions and provides extra perception into the machine operation. This quantity additionally: -Discusses units which may have an important impression on enhancing the potency of the voltage-regulator-modules used to convey energy to microprocessors and images chips in laptops and servers -Covers functions in all decrease voltage circuits, in particular the car electronics region comprises numerical simulation examples to provide an explanation for the working physics and validate the types - bargains broad insurance of the position of silicon carbide within the layout and constitution of strength rectifiers "Advanced energy MOSFET strategies" is a must-read for researchers and practising engineers within the energy machine industry.

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Extra resources for Advanced Power MOSFET Concepts

Example text

The inversion layer mobility was found to be 450 cm2/V s while that for the accumulation layer was found to be 1,000 cm2/V s at a gate bias of 10 V. These values were consequently used in the analytical models when calculating the specific on-resistance. 3 Blocking Voltage The power D-MOSFET structure must be designed to support a high voltage in the first quadrant when the drain bias voltage is positive. During operation in the blocking mode, the gate electrode is shorted to the source electrode by the external gate bias circuit.

The electric field developed across junction J1 during the blocking mode is also illustrated in Fig. 12. Due to the graded doping profile, the electric field extends on both sides of junction J1. The electric field in the P-base region supports a portion of the applied positive drain voltage. This implies that the same breakdown voltage can be achieved with a larger doping concentration and a smaller thickness for the N-drift region. This improvement can be translated to increasing the breakdown N+ P-Base Doping Concentration J2 N-Drift N+ J1 NN+S NPS ND y Electric Field y Fig.

6 Â 1016/cm3. Consequently, the drift region resistance contribution is larger for Model B than for Model A. 5 N+ Substrate Resistance When the current reaches the bottom of the N-drift region, it is very quickly distributed throughout the heavily doped N+ substrate. The current flow through the substrate can therefore be assumed to occur with a uniform cross-sectional area. 12) where rSUB and tSUB are the resistivity and thickness of the N+ substrate. The contribution from the N+ substrate is therefore dependent up on the available technology for reducing its thickness and resistivity while maintaining good manufacturability.

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Advanced Power MOSFET Concepts by B. Jayant Baliga

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